发明授权
- 专利标题： MRAM having SAL layer
- 专利标题（中）： MRAM具有SAL层
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申请号： US10606733申请日： 2003-06-27
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公开(公告)号： US06947312B2公开(公告)日： 2005-09-20
- 发明人: Kentaro Nakajima
- 申请人： Kentaro Nakajima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-049610 20030226
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; G11C11/15 ; H01L21/8246 ; H01L27/105 ; H01L27/115 ; H01L43/08 ; G11C7/00
摘要：
A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.
公开/授权文献
- US20040165453A1 MRAM having SAL layer 公开/授权日：2004-08-26
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