- 专利标题: Method for fabricating image display device
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申请号: US10602738申请日: 2003-06-25
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公开(公告)号: US06949452B2公开(公告)日: 2005-09-27
- 发明人: Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
- 申请人: Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JPP2002-215239 20020724
- 主分类号: G02F1/1362
- IPC分类号: G02F1/1362 ; G02F1/1368 ; H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/04 ; H01L29/786 ; H01L21/00 ; H01L21/82 ; H01L21/26
摘要:
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
公开/授权文献
- US20040082090A1 METHOD FOR FABRICATING IMAGE DISPLAY DEVICE 公开/授权日:2004-04-29
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