- 专利标题： Method for fabricating poly patterns
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申请号： US10631251申请日： 2003-07-31
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公开(公告)号： US06949471B2公开(公告)日： 2005-09-27
- 发明人: Ching-Chen Hao , Hung-Jen Lin , Min-Hwa Chi , Chih-Heng Shen
- 申请人： Ching-Chen Hao , Hung-Jen Lin , Min-Hwa Chi , Chih-Heng Shen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/28 ; H01L21/283 ; H01L21/31 ; H01L21/3213 ; H01L21/336 ; H01L21/4763 ; H01L21/8234 ; H01L21/8238
摘要：
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed.
公开/授权文献
- US20050026406A1 Method for fabricating poly patterns 公开/授权日：2005-02-03
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