发明授权
US06949473B2 Methods for identifying and removing an oxide-induced dead zone in a semiconductor device structure
失效
用于识别和去除半导体器件结构中的氧化物诱导死区的方法
- 专利标题: Methods for identifying and removing an oxide-induced dead zone in a semiconductor device structure
- 专利标题(中): 用于识别和去除半导体器件结构中的氧化物诱导死区的方法
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申请号: US10156324申请日: 2002-05-24
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公开(公告)号: US06949473B2公开(公告)日: 2005-09-27
- 发明人: James R. Biard , James K. Guenter
- 申请人: James R. Biard , James K. Guenter
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Workman Nydegger
- 主分类号: H01S5/183
- IPC分类号: H01S5/183 ; H01S5/20 ; H01L21/31
摘要:
A method and system for identifying and/or removing an oxide-induced dead zone in a VCSEL structure is disclosed herein. In general, a VCSEL structure can be formed having at least one oxide layer and an oxide-induced dead zone thereof. A thermal annealing operation can then be performed upon the VCSEL structure to remove the oxide-induced dead zone, thereby permitting oxide VCSEL structures thereof to be reliably and consistently fabricated. An oxidation operation may initially be performed upon the VCSEL structure to form the oxide layer and the associated oxide-induced dead zone. The thermal annealing operation is preferably performed upon the VCSEL after performing a wet oxidation operation upon the VCSEL structure.