- 专利标题： Thin-film transistor and method for making the same
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申请号： US10051267申请日： 2002-01-18
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公开(公告)号： US06952021B2公开(公告)日： 2005-10-04
- 发明人: Tsutomu Tanaka , Masahiro Fujino , Hisao Hayashi
- 申请人： Tsutomu Tanaka , Masahiro Fujino , Hisao Hayashi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sonnenschein, Nath & Rosenthal LLP
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; G02F1/1368 ; G09F9/00 ; G09F9/30 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/13 ; H01L27/32 ; H01L29/786 ; H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.
公开/授权文献
- US20020063254A1 Thin-film transistor and method for making the same 公开/授权日：2002-05-30
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