- 专利标题: Integrating n-type and p-type metal gate transistors
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申请号: US10851360申请日: 2004-05-20
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公开(公告)号: US06953719B2公开(公告)日: 2005-10-11
- 发明人: Mark Doczy , Justin K. Brask , Steven J. Keating , Chris E. Barns , Brian S. Doyle , Michael L. McSwiney , Jack T. Kavalieros , John P. Barnak
- 申请人: Mark Doczy , Justin K. Brask , Steven J. Keating , Chris E. Barns , Brian S. Doyle , Michael L. McSwiney , Jack T. Kavalieros , John P. Barnak
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Erik M. Metzger
- 主分类号: H01L21/3213
- IPC分类号: H01L21/3213 ; H01L21/336 ; H01L21/8238 ; H01L29/49 ; H01L29/78 ; H01L21/3205 ; H01L21/4763
摘要:
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
公开/授权文献
- US20040214385A1 Integrating n-type and p-type metal gate transistors 公开/授权日:2004-10-28