- 专利标题： Magnetic memory device having a plurality of magneto-resistance effect elements arranged in a matrix form and method for manufacturing the same
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申请号： US10771548申请日： 2004-02-05
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公开(公告)号： US06956270B2公开(公告)日： 2005-10-18
- 发明人: Yoshiaki Fukuzumi
- 申请人： Yoshiaki Fukuzumi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-208089 20030820
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L29/82 ; H01L43/00
摘要：
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
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