发明授权
- 专利标题： Low cost high density rectifier matrix memory
- 专利标题（中）： 低成本高密度整流矩阵存储器
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申请号： US09887201申请日： 2001-06-22
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公开(公告)号： US06956757B2公开(公告)日： 2005-10-18
- 发明人: Daniel Robert Shepard
- 申请人： Daniel Robert Shepard
- 申请人地址： US NH Salem
- 专利权人： Contour Semiconductor, Inc.
- 当前专利权人： Contour Semiconductor, Inc.
- 当前专利权人地址： US NH Salem
- 代理机构： Goodwin Procter LLP
- 主分类号： G11C29/02
- IPC分类号： G11C29/02 ; H01L21/84 ; H01L27/10 ; H01L27/12 ; G11C17/00
摘要：
A high density memory device is fabricated three dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
公开/授权文献
- US20030235088A1 Low cost high density rectifier matrix memory 公开/授权日：2003-12-25
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