Invention Grant
- Patent Title: Method for dual-layer polyimide processing on bumping technology
- Patent Title (中): 碰撞技术双层聚酰亚胺加工方法
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Application No.: US10437373Application Date: 2003-05-13
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Publication No.: US06958546B2Publication Date: 2005-10-25
- Inventor: Fu-Jier Fan , Cheng-Yu Chu , Kuo Wei Lin , Shih-Jang Lin , Yang-Tung Fran , Chiou-Shian Peng
- Applicant: Fu-Jier Fan , Cheng-Yu Chu , Kuo Wei Lin , Shih-Jang Lin , Yang-Tung Fran , Chiou-Shian Peng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L23/485 ; H01L23/48

Abstract:
A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.
Public/Granted literature
- US20030199159A1 Novel method for dual-layer polyimide processing on bumping technology Public/Granted day:2003-10-23
Information query
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