Low Cu percentages for reducing shorts in AlCu lines

Invention Grant

US06960306B2 Low Cu percentages for reducing shorts in AlCu lines 失效

Title translation: 用于减少AlCu线中短路的低Cu百分比

Please log in to see more content

Patent Title: Low Cu percentages for reducing shorts in AlCu lines
Patent Title (中): 用于减少AlCu线中短路的低Cu百分比
Application No.: US10207773

Application Date: 2002-07-31
Publication No.: US06960306B2

Publication Date: 2005-11-01
Inventor: Roy C. Iggulden , Padraic Shafer , Kwong Hon (Keith) Wong , Michael M. Iwatake , Jay W. Strane , Thomas Goebel , Donna D. Miura , Chet Dziobkowski , Werner Robl , Brian Hughes
Applicant: Roy C. Iggulden , Padraic Shafer , Kwong Hon (Keith) Wong , Michael M. Iwatake , Jay W. Strane , Thomas Goebel , Donna D. Miura , Chet Dziobkowski , Werner Robl , Brian Hughes
Applicant Address: DE Munich US NY Armonk
Assignee: Infineon Technologies AG,International Business Machines Corporation
Current Assignee: Infineon Technologies AG,International Business Machines Corporation
Current Assignee Address: DE Munich US NY Armonk
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/768 ; H01L21/00

Low Cu percentages for reducing shorts in AlCu lines

Abstract:

In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract(Chinese):

在微电子器件形成期间制造金属化结构的方法中，改进后续进行反应离子蚀刻的覆盖金属沉积层中的金属短路，包括：a）沉积在第一底层上，与底层电接触的合金金属的电短路减少量; b）沉积光致抗蚀剂并曝光和显影以在包含合金金属的电短缩量的橡皮布铝化合物上留下光刻胶图案; 和c）反应离子蚀刻，以获得含有合金金属线的铝化合物，其特征在于少于铝化合物的短路量，而没有所述合金金属的减少量。

Public/Granted literature

US20040020891A1 Low Cu percentages for reducing shorts in AlCu lines Public/Granted day:2004-02-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）