公开(公告)号：US06960306B2

公开(公告)日：2005-11-01

申请号：US10207773

申请日：2002-07-31

Applicant: Roy C. Iggulden ,  Padraic Shafer ,  Kwong Hon (Keith) Wong ,  Michael M. Iwatake ,  Jay W. Strane ,  Thomas Goebel ,  Donna D. Miura ,  Chet Dziobkowski ,  Werner Robl ,  Brian Hughes

Inventor： Roy C. Iggulden ,  Padraic Shafer ,  Kwong Hon (Keith) Wong ,  Michael M. Iwatake ,  Jay W. Strane ,  Thomas Goebel ,  Donna D. Miura ,  Chet Dziobkowski ,  Werner Robl ,  Brian Hughes

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/32051 ,  H01L21/76838

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract translation: 在微电子器件形成期间制造金属化结构的方法中，改进后续进行反应离子蚀刻的覆盖金属沉积层中的金属短路，包括：a）沉积在第一底层上， 与底层电接触的合金金属的电短路减少量; b）沉积光致抗蚀剂并曝光和显影以在包含合金金属的电短缩量的橡皮布铝化合物上留下光刻胶图案; 和c）反应离子蚀刻，以获得含有合金金属线的铝化合物，其特征在于少于铝化合物的短路量，而没有所述合金金属的减少量。