发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US10810813申请日: 2004-03-29
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公开(公告)号: US06965154B2公开(公告)日: 2005-11-15
- 发明人: Shunichi Abe , Tetsuya Uebayashi , Naoki Izumi , Akira Yamazaki
- 申请人: Shunichi Abe , Tetsuya Uebayashi , Naoki Izumi , Akira Yamazaki
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2001-032362 20010208
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L23/495 ; H01L23/50 ; H01L25/065 ; H01L25/07 ; H01L29/00 ; H01L23/06 ; H01L23/34 ; H01L23/48
摘要:
A semiconductor device and a manufacturing method thereof are provided with downsizing and densification achieved by reducing the thickness of the semiconductor device without increase in area. Terminal electrodes are arranged, in plan view, outside a region where semiconductor chips are arranged. A lower semiconductor chip is placed to overlap in the range of height with the terminal electrodes, an upper semiconductor chip is placed above the lower semiconductor chip, a wire connects the upper and lower semiconductor chips to the terminal electrodes, and an encapsulating resin encapsulates the upper and lower semiconductor chips and wire. The encapsulating resin has its bottom surface coplanar with the bottom surface of the terminal electrodes.
公开/授权文献
- US20040178490A1 Semiconductor device 公开/授权日:2004-09-16
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