- 专利标题： Memory device and method using positive gate stress to recover overerased cell
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申请号： US10677790申请日： 2003-10-02
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公开(公告)号： US06967873B2公开(公告)日： 2005-11-22
- 发明人: Darlene G. Hamilton , Zhizheng Liu , Mark W. Randolph , Yi He , Edward Hsia , Kulachet Tanpairoj , Mimi Lee , Alykhan Madhani
- 申请人： Darlene G. Hamilton , Zhizheng Liu , Mark W. Randolph , Yi He , Edward Hsia , Kulachet Tanpairoj , Mimi Lee , Alykhan Madhani
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/34 ; G11C11/34
摘要：
A method of erasing a flash electrically erasable read only memory (EEPROM) device composed of a plurality of memory cells includes pre-programming the plurality of memory cells, applying an erase pulse to the plurality of memory cells followed by an erase verification. The erase verification is followed by soft programming any memory cells having a threshold voltage below a predetermined minimum level and applying a positive gate stress to the plurality of memory cells. The erase method prevents overerasing and provides a tightened threshold voltage distribution.