发明授权
- 专利标题: Non-volatile semiconductor memory device
- 专利标题(中): 非易失性半导体存储器件
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申请号: US10418046申请日: 2003-04-18
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公开(公告)号: US06968435B2公开(公告)日: 2005-11-22
- 发明人: Hiroshi Shimoda
- 申请人: Hiroshi Shimoda
- 申请人地址: JP Kanagawa
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2002-122830 20020424
- 主分类号: G11C16/02
- IPC分类号: G11C16/02 ; G06F12/00 ; G06F12/02 ; G11C16/10
摘要:
A non-volatile semiconductor memory device according to the invention includes a copy area latch circuit for latching information therein, a copy source address latch circuit for latching therein information read from a copy source, and write control means for comparing the information latched in the copy area latch circuit and the information latched in the copy source address latch circuit with each other, and automatically copying data latched in a source area of the copy source to a destination area of a copy destination, the destination area corresponding to the source area, until the information latched in the copy area latch circuit and the information latched in the copy source address latch circuit become coincide with each other following implementation of a newly provided copy command when data is copied from external storage means as a copy source to a non-volatile memory.
公开/授权文献
- US20030204689A1 Non-volatile semiconductor memory device 公开/授权日:2003-10-30
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