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US06968435B2 Non-volatile semiconductor memory device 有权
非易失性半导体存储器件

Non-volatile semiconductor memory device
摘要:
A non-volatile semiconductor memory device according to the invention includes a copy area latch circuit for latching information therein, a copy source address latch circuit for latching therein information read from a copy source, and write control means for comparing the information latched in the copy area latch circuit and the information latched in the copy source address latch circuit with each other, and automatically copying data latched in a source area of the copy source to a destination area of a copy destination, the destination area corresponding to the source area, until the information latched in the copy area latch circuit and the information latched in the copy source address latch circuit become coincide with each other following implementation of a newly provided copy command when data is copied from external storage means as a copy source to a non-volatile memory.
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