发明授权
- 专利标题: Wafer level hermetic sealing method
- 专利标题(中): 晶圆级气密密封方法
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申请号: US09984734申请日: 2001-10-31
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公开(公告)号: US06969639B2公开(公告)日: 2005-11-29
- 发明人: Chang-ho Cho , Hyung-jae Shin , Woon-bae Kim
- 申请人: Chang-ho Cho , Hyung-jae Shin , Woon-bae Kim
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Stein, McEwen & Bui, LLP
- 优先权: KR2001-5256 20010203
- 主分类号: H01L23/14
- IPC分类号: H01L23/14 ; B81B7/00 ; B81C1/00 ; H01L21/50 ; H01L23/00 ; H01L23/04 ; H01L23/10 ; H01L21/44 ; H01L21/48
摘要:
A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.
公开/授权文献
- US20020113296A1 Wafer level hermetic sealing method 公开/授权日:2002-08-22
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