发明授权
US06969885B2 Non-volatile semiconductor memory device with first and second nitride insulators
有权
具有第一和第二氮化物绝缘体的非易失性半导体存储器件
- 专利标题： Non-volatile semiconductor memory device with first and second nitride insulators
- 专利标题（中）： 具有第一和第二氮化物绝缘体的非易失性半导体存储器件
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申请号： US10732475申请日： 2003-12-11
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公开(公告)号： US06969885B2公开(公告)日： 2005-11-29
- 发明人: Tadahiro Omi , Naoki Ueda
- 申请人： Tadahiro Omi , Naoki Ueda
- 申请人地址： JP Miyagi JP Osaka
- 专利权人： Tadahiro Omi,Sharp Kabushiki Kaisha
- 当前专利权人： Tadahiro Omi,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Miyagi JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2002-360872 20021212
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/28 ; H01L21/318 ; H01L21/8247 ; H01L27/088 ; H01L27/10 ; H01L27/115 ; H01L29/423 ; H01L29/51 ; H01L29/78 ; H01L29/788 ; H01L29/792
摘要：
A non-volatile semiconductor memory device comprising at least: a first electrode containing silicon atoms; and a second electrode formed on the first electrode through an insulating film, wherein the insulating film is formed of at least two layers of: a lower silicon nitride film on the first electrode side obtained by nitriding the first electrode; and an upper silicon nitride film formed on the lower silicon nitride film according to a chemical vapor deposition method, and at least a part of the lower silicon nitride film contains a rare gas element at an area density of 1010 cm−2 or more.
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