发明授权
- 专利标题： Semiconductor package production method and semiconductor package
- 专利标题（中）： 半导体封装生产方法和半导体封装
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申请号： US10865276申请日： 2004-06-10
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公开(公告)号： US06969919B2公开(公告)日： 2005-11-29
- 发明人: Kiyoshi Yajima , Mutsumi Masumoto , Chihiro Hatano , Kimitaka Nishio , Noriyuki Kirikae
- 申请人： Kiyoshi Yajima , Mutsumi Masumoto , Chihiro Hatano , Kimitaka Nishio , Noriyuki Kirikae
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Yingsheng Tung; Wade James Brady, III; Frederick J. Telecky, Jr.
- 优先权： JP2000-275343 20000911
- 主分类号： C09J11/04
- IPC分类号： C09J11/04 ; C09J163/00 ; C09J171/10 ; C09J201/00 ; H01L21/301 ; H01L21/44 ; H01L21/52 ; H01L21/58 ; H01L21/68 ; H01L21/78 ; H01L23/29 ; H01L23/48
摘要：
A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 μm or thicker. A semiconductor device made by this method and a wafer for use with this method.
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