发明授权
- 专利标题: Method and apparatus for measuring thin film, and thin film deposition system
- 专利标题(中): 测量薄膜的方法和装置以及薄膜沉积系统
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申请号: US09852111申请日: 2001-05-09
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公开(公告)号: US06970532B2公开(公告)日: 2005-11-29
- 发明人: Seiichi Hayashi , Jimpei Harada , Tetsuo Kikuchi , Kazuhiko Omote , Katsuhiko Inaba
- 申请人: Seiichi Hayashi , Jimpei Harada , Tetsuo Kikuchi , Kazuhiko Omote , Katsuhiko Inaba
- 申请人地址: JP Tokyo
- 专利权人: Rigaku Corporation
- 当前专利权人: Rigaku Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Jordan and Hamburg LLP
- 优先权: JP2000-137629 20000510
- 主分类号: G01B15/02
- IPC分类号: G01B15/02 ; G01N23/20
摘要:
The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin film deposition sample substrate for allowing a thin film substance flowing in from the thin film deposition furnace to adhere while X-ray incidence and extraction windows being provided on the side walls of the measuring unit, wherein X-ray is irradiated on the thin film deposition sample substrate in the measuring unit through the X-ray incidence window by means of a thin film measuring unit provided at the outside of the thin film deposition furnace, and the X-ray reflected from the thin film deposition sample substrate is sensed through the X-ray extraction window.
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