发明授权
- 专利标题： Method and apparatus for etching Si
- 专利标题（中）： 蚀刻Si的方法和装置
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申请号： US10654889申请日： 2003-09-05
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公开(公告)号： US06972264B2公开(公告)日： 2005-12-06
- 发明人: Yoshitaka Saita , Masashi Yamaguchi
- 申请人： Yoshitaka Saita , Masashi Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-260936 20020906
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/302 ; H01L21/3065 ; H01L21/461
摘要：
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time τ of the etching gas is equal to or greater than about 180 msec, the residence time τ being defined as: τ=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
公开/授权文献
- US20040048487A1 Method and apparatus for etching Si 公开/授权日：2004-03-11
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