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公开(公告)号：US06972264B2
公开(公告)日：2005-12-06
申请号：US10654889
申请日：2003-09-05
申请人： Yoshitaka Saita , Masashi Yamaguchi
发明人： Yoshitaka Saita , Masashi Yamaguchi
IPC分类号： H01L21/306 , H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01J37/32082 , H01L21/3065
摘要： A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time τ of the etching gas is equal to or greater than about 180 msec, the residence time τ being defined as: τ=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
摘要翻译： 用于在处理室中干蚀刻Si衬底或Si层的方法包括向处理室提供蚀刻气体的步骤，其中蚀刻气体是包括Cl 2 O 2，O ＆lt; 2＆gt;和NF 3＆gt;和蚀刻气体的停留时间τ等于或大于约180msec，停留时间τt定义为： -formulae description =“In-line Formulas”end =“lead”？> tau = pV / Q <？in-line-formula description =“In-line Formulas”end =“tail”？>其中p表示内部压力 的处理室; V，在Si衬底或Si层上形成的有效体积的蚀刻空间; Q为蚀刻气体的流量。
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公开(公告)号：US20060021704A1
公开(公告)日：2006-02-02
申请号：US11229533
申请日：2005-09-20
申请人： Yoshitaka Saita , Masashi Yamaguchi
发明人： Yoshitaka Saita , Masashi Yamaguchi
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01L21/3065
摘要： A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time τ of the etching gas is equal to or greater than about 180 msec, the residence time τ being defined as: τ=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
摘要翻译： 用于在处理室中干蚀刻Si衬底或Si层的方法包括向处理室提供蚀刻气体的步骤，其中蚀刻气体是包括Cl 2 O 2，O ＆lt; 2＆gt;和NF 3＆gt;和蚀刻气体的停留时间τ等于或大于约180msec，停留时间τt定义为： -formulae description =“In-line Formulas”end =“lead”？> tau = pV / Q <？in-line-formula description =“In-line Formulas”end =“tail”？>其中p表示内部压力 的处理室; V，在Si衬底或Si层上形成的有效体积的蚀刻空间; Q为蚀刻气体的流量。
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公开(公告)号：US20100133231A1
公开(公告)日：2010-06-03
申请号：US12588395
申请日：2009-10-14
IPC分类号： C23F1/00
CPC分类号： G01N21/211
摘要： The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step.
摘要翻译： 本发明是一种处理方法，包括对工件进行预定处理的处理步骤; 不必要部分去除步骤，用于去除由于预定处理而在工件的表面上产生的不必要部分; 以及表面结构评价步骤，通过不必要部分去除步骤来评价已经从其中去除了不必要部分的工件的表面结构。
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公开(公告)号：US08778205B2
公开(公告)日：2014-07-15
申请号：US12588395
申请日：2009-10-14
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： G01N21/211
摘要： The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step.
摘要翻译： 本发明是一种处理方法，包括对工件进行预定处理的处理步骤; 不必要部分去除步骤，用于去除由于预定处理而在工件的表面上产生的不必要部分; 以及表面结构评价步骤，通过不必要部分去除步骤来评价已经从其中去除了不必要部分的工件的表面结构。
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