发明授权
- 专利标题: State save-on-power-down using GMR non-volatile elements
- 专利标题(中): 使用GMR非易失性元素的状态保存掉电
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申请号: US10637145申请日: 2003-08-08
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公开(公告)号: US06972988B1公开(公告)日: 2005-12-06
- 发明人: Yong Lu , Romney R. Katti
- 申请人: Yong Lu , Romney R. Katti
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C11/00 ; G11C11/16
摘要:
The semiconductor industry seeks to reduce the risk of traditional volatile storage devices with improved non-volatile storage devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated giant-magneto-resistive (GMR) structures. A non-volatile logic state retention devices, such as GMR storage elements, and concerns a save-on-power-down circuit that may be integrated with conventional semiconductor-based computing, logic, and memory devices to retain volatile logic states and/or volatile digital information in a non-volatile manner.
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