发明授权
- 专利标题： Double-gate transistor with enhanced carrier mobility
- 专利标题（中）： 具有增强的载流子迁移率的双栅晶体管
-
申请号： US10463080申请日： 2003-06-16
-
公开(公告)号： US06974733B2公开(公告)日： 2005-12-13
- 发明人: Boyan Boyanov , Brian Doyle , Jack Kavalieros , Anand Murthy , Robert Chau
- 申请人： Boyan Boyanov , Brian Doyle , Jack Kavalieros , Anand Murthy , Robert Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor and Zafman
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/78 ; H01L21/338
摘要：
There is disclosed an apparatus including a straining substrate, a device over the substrate including a channel, wherein the straining substrate strains the device in a direction substantially perpendicular to a direction of current flow in the channel.
公开/授权文献
- US20040253774A1 Double-gate transistor with enhanced carrier mobility 公开/授权日：2004-12-16
信息查询
IPC分类:
