Invention Grant
- Patent Title: Double-gate transistor with enhanced carrier mobility
- Patent Title (中): 具有增强的载流子迁移率的双栅晶体管
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Application No.: US10463080Application Date: 2003-06-16
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Publication No.: US06974733B2Publication Date: 2005-12-13
- Inventor: Boyan Boyanov , Brian Doyle , Jack Kavalieros , Anand Murthy , Robert Chau
- Applicant: Boyan Boyanov , Brian Doyle , Jack Kavalieros , Anand Murthy , Robert Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor and Zafman
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/10 ; H01L29/78 ; H01L21/338
Abstract:
There is disclosed an apparatus including a straining substrate, a device over the substrate including a channel, wherein the straining substrate strains the device in a direction substantially perpendicular to a direction of current flow in the channel.
Public/Granted literature
- US20040253774A1 Double-gate transistor with enhanced carrier mobility Public/Granted day:2004-12-16
Information query
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