发明授权
US06974989B1 Structure and method for protecting memory cells from UV radiation damage and UV radiation-induced charging during backend processing
有权
用于保护记忆细胞免受后期处理中的紫外线辐射损伤和紫外线辐射诱导的充电的结构和方法
- 专利标题： Structure and method for protecting memory cells from UV radiation damage and UV radiation-induced charging during backend processing
- 专利标题（中）： 用于保护记忆细胞免受后期处理中的紫外线辐射损伤和紫外线辐射诱导的充电的结构和方法
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申请号： US10841933申请日： 2004-05-06
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公开(公告)号： US06974989B1公开(公告)日： 2005-12-13
- 发明人: Cinti X. Chen , Boon-Yong Ang , Hajime Wada , Sameer S. Haddad , Inkuk Kang
- 申请人： Cinti X. Chen , Boon-Yong Ang , Hajime Wada , Sameer S. Haddad , Inkuk Kang
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L21/8246
- IPC分类号： H01L21/8246 ; H01L21/8247 ; H01L27/108 ; H01L27/115
摘要：
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.
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