发明授权
- 专利标题: Manufacturing method for semiconductor devices
- 专利标题(中): 半导体器件的制造方法
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申请号: US10460155申请日: 2003-06-13
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公开(公告)号: US06977229B2公开(公告)日: 2005-12-20
- 发明人: Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa
- 申请人: Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2002-216011 20020725
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; H01L21/00 ; H01L21/306 ; H01L21/311 ; H01L21/768 ; H01L21/302
摘要:
The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
公开/授权文献
- US20040018727A1 Manufacturing method for semiconductor devices 公开/授权日:2004-01-29
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