发明授权
- 专利标题: Gating grid and method of making same
- 专利标题(中): 门格栅及其制作方法
-
申请号: US10451860申请日: 2003-01-29
-
公开(公告)号: US06977381B2公开(公告)日: 2005-12-20
- 发明人: Harry K. Charles, Jr. , Arthur S. Francomacaro , Allen C. Keeney , David M. Lee , Timothy J. Cornish
- 申请人: Harry K. Charles, Jr. , Arthur S. Francomacaro , Allen C. Keeney , David M. Lee , Timothy J. Cornish
- 申请人地址: US MD Baltimore
- 专利权人: The Johns Hopkins University
- 当前专利权人: The Johns Hopkins University
- 当前专利权人地址: US MD Baltimore
- 代理商 Albert J. Fasulo, II
- 国际申请: PCT/US03/02488 WO 20030129
- 国际公布: WO03/065763 WO 20030807
- 主分类号: H01F7/06
- IPC分类号: H01F7/06 ; H01J1/46 ; H01J9/12 ; H01J37/147 ; H01J49/06 ; H01J49/40 ; H04R17/00 ; H05K3/06
摘要:
A gating grid for deflecting ions includes an insulating substrate (16), a conducting layer (28) adhered to the insulating substrate (16), and interdigitated electrodes (14) patterned in the conducting layer by a photolithographic process. A hole (18) in the insulating substrate beneath the interdigitated electrodes allows ions to pass through the hole in the substrate. A process for making a gating grid for deflecting ions includes adhering a conducting layer (28) to an insulating substrate (16), forming interdigitated electrodes (14) on the conducting layer (28), and then forming a hole (18) in the insulating substrate beneath the interdigitated electrodes.
公开/授权文献
- US20040231150A1 Gating grid and method of making same 公开/授权日:2004-11-25
信息查询