Invention Grant
US06979638B2 Conducting wire and contact opening forming method for reducing photoresist thickness and via resistance
有权
导电丝和接触开口形成方法，用于减少光致抗蚀剂厚度和通孔电阻
- Patent Title: Conducting wire and contact opening forming method for reducing photoresist thickness and via resistance
- Patent Title (中): 导电丝和接触开口形成方法，用于减少光致抗蚀剂厚度和通孔电阻
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Application No.: US10783014Application Date: 2004-02-23
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Publication No.: US06979638B2Publication Date: 2005-12-27
- Inventor: Tse-Yao Huang , Yi-Nan Chen , Chiang-Lin Shih
- Applicant: Tse-Yao Huang , Yi-Nan Chen , Chiang-Lin Shih
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Bacon & Thomas
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/4763 ; H01L21/768
Abstract:
Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.
Public/Granted literature
- US20050186775A1 CONDUCTING WIRE AND CONTACT OPENING FORMING METHOD FOR REDUCING PHOTORESIST THICKNESS AND VIA RESISTANCE Public/Granted day:2005-08-25
Information query
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