发明授权
- 专利标题: Pattern compensation for stitching
- 专利标题(中): 拼接图案补偿
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申请号: US10402590申请日: 2003-03-28
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公开(公告)号: US06982135B2公开(公告)日: 2006-01-03
- 发明人: Chung-Hsing Chang , Chien-Hung Lin , Burn J. Lin , Chia-Hui Lin , Chih-Cheng Chin , Chin-Hsiang Lin , Fu-Jye Liang , Jeng-Horng Chen , Bang-Ching Ho
- 申请人: Chung-Hsing Chang , Chien-Hung Lin , Burn J. Lin , Chia-Hui Lin , Chih-Cheng Chin , Chin-Hsiang Lin , Fu-Jye Liang , Jeng-Horng Chen , Bang-Ching Ho
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW
- 代理机构: Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; G03F7/20
摘要:
A method for transferring a pattern from a mask to a substrate (or wafer), comprises dividing a mask generation data file into a plurality of segments. The segments include a main pattern area and a stitching area. Each stitching area contains a respective common pattern. An image of an illuminated portion of the main pattern area is formed. Connection ends of the segments in a substrate area (or wafer area) are illuminated with an illumination beam. An image of the illuminated portion of the main pattern area is formed, and a halftone gray level dosage distribution is produced in the substrate area (or wafer area) corresponding to the common pattern. The common patterns of adjacent segments substantially overlap in the substrate area (or wafer area).
公开/授权文献
- US20040191643A1 Pattern compensation for stitching 公开/授权日:2004-09-30
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