发明授权
- 专利标题： Mechanism for improving the structural integrity of low-k films
- 专利标题（中）： 改善低k膜结构完整性的机理
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申请号： US10679004申请日： 2003-10-02
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公开(公告)号： US06982206B1公开(公告)日： 2006-01-03
- 发明人: Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
- 申请人： Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
- 申请人地址： US CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Beyer Weaver & Thomas, LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.
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