发明授权
- 专利标题： Group III nitride compound semiconductor device and method for producing the same
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申请号： US09985927申请日： 2001-11-06
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公开(公告)号： US06982435B2公开(公告)日： 2006-01-03
- 发明人: Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
- 申请人： Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
- 申请人地址： JP Aichi
- 专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人地址： JP Aichi
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP11-092948 19990331
- 主分类号： H01L31/0256
- IPC分类号： H01L31/0256
摘要：
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.
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