A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.