发明授权
- 专利标题: Semiconductor device having a vertical type semiconductor element
- 专利标题(中): 具有垂直型半导体元件的半导体器件
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申请号: US10634819申请日: 2003-08-06
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公开(公告)号: US06982459B2公开(公告)日: 2006-01-03
- 发明人: Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
- 申请人: Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
- 申请人地址: JP Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2000-383440 20001218
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.