发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10777068申请日： 2004-02-13
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公开(公告)号： US06982555B2公开(公告)日： 2006-01-03
- 发明人: Kyoji Yamashita , Tatsuya Kunikiyo , Tetsuya Watanabe , Toshiki Kanamoto
- 申请人： Kyoji Yamashita , Tatsuya Kunikiyo , Tetsuya Watanabe , Toshiki Kanamoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-271883 20030708
- 主分类号： G01R31/08
- IPC分类号： G01R31/08 ; G01R31/28
摘要：
PMISFETs and NMISFETs are placed in a capacitance measuring circuit. Each of interconnects is connected via the corresponding PMISFET through a charging voltage supply part to a power supply pad and via the corresponding NMISFET through a current sampling part to a current-monitoring pad. A current I can be measured by bringing a probe of an ammeter into contact with the current-monitoring pad.
公开/授权文献
- US20050007120A1 Semiconductor device 公开/授权日：2005-01-13