摘要:
PMISFETs and NMISFETs are placed in a capacitance measuring circuit. Each of interconnects is connected via the corresponding PMISFET through a charging voltage supply part to a power supply pad and via the corresponding NMISFET through a current sampling part to a current-monitoring pad. A current I can be measured by bringing a probe of an ammeter into contact with the current-monitoring pad.
摘要:
An FTI structure is employed in an isolation region making contact in a Y direction with a P-type impurity region serving as a drain region of a PMOS transistor. First, second and third N-type impurity layers serving as body regions are connected to a high potential line via fourth, fifth and sixth N-type impurity layers, respectively, and further via a seventh N-type impurity layer. The fourth to sixth N-type impurity layers are provided between an insulating layer of an SOI substrate and an element isolation insulating film in a PTI region.
摘要:
A memory cell information producing unit obtains physical terminal coordinates, physical terminal names and logical terminal names of a memory cell and layout data, and operates based on them to specify parasitic elements parasitic on interconnections of the memory cell, and to produce memory cell information including the physical terminal names and representing physical properties and a connection relationship of inner elements of the memory cell and the parasitic elements. Memory cell array information producing unit obtains connection information determining the connection relationship of physical terminals of the memory cell, assigns node names to the physical terminals of the memory cell based on the connection information, and produces memory cell array information representing the node names of all the memory cells. A memory cell array net list producing unit produces a net list of the memory cell array formed of the memory cell information and the memory cell array information.
摘要:
An FTI structure is employed in an isolation region making contact in a Y direction with a P-type impurity region serving as a drain region of a PMOS transistor. First, second and third N-type impurity layers serving as body regions are connected to a high potential line via fourth, fifth and sixth N-type impurity layers, respectively, and further via a seventh N-type impurity layer. The fourth to sixth N-type impurity layers are provided between an insulating layer of an SOI substrate and an element isolation insulating film in a PTI region.
摘要:
A semiconductor circuit extraction apparatus: detects the uppermost wiring layer of a cell; carries out virtual wiring conductor routing on all tracks of a cell-top wiring layer directly overlying the uppermost wiring layer of the cell; extracts parasitic capacitances of all the wiring conductors including those virtually routed; and calculates the delay time of placement/routing data in accordance with the extracted parasitic capacitances to provide highly accurate delay information library data.
摘要:
In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.
摘要:
A memory cell information producing unit obtains physical terminal coordinates, physical terminal names and logical terminal names of a memory cell and layout data, and operates based on them to specify parasitic elements parasitic on interconnections of the memory cell, and to produce memory cell information including the physical terminal names and representing physical properties and a connection relationship of inner elements of the memory cell and the parasitic elements. Memory cell array information producing unit obtains connection information determining the connection relationship of physical terminals of the memory cell, assigns node names to the physical terminals of the memory cell based on the connection information, and produces memory cell array information representing the node names of all the memory cells. A memory cell array net list producing unit produces a net list of the memory cell array formed of the memory cell information and the memory cell array information.
摘要:
A CBCM circuit is capable of separately measuring each component of a measuring target capacitance. A node (N1) is electrically connected to a terminal (P2) between the drains of PMOS and NMOS transistors (MP2, MN2). As a target capacitance forming part, a coupling capacitance (Cc) is formed between the node (N1) and a node (N2). The node (N2) is connected to a pad (58) through the terminal (P2) and an NMOS transistor (MN3), and a node (N3) is connected to a terminal (P3) between the drains of PMOS and NMOS transistors (MP1, MN1). A reference capacitance (Cref) is formed at the node (N3) as a dummy capacitance. Currents (Ir, It) supplied from a power source to the nodes (N3, N1) are measured with current meters (61, 62), respectively and a current (Im) induced from the node (N2) and flowing to a ground level is measured with a current meter (63).
摘要:
An FTI structure is employed in an isolation region making contact in a Y direction with a P-type impurity region serving as a drain region of a PMOS transistor. First, second and third N-type impurity layers serving as body regions are connected to a high potential line via fourth, fifth and sixth N-type impurity layers, respectively, and further via a seventh N-type impurity layer. The fourth to sixth N-type impurity layers are provided between an insulating layer of an SOI substrate and an element isolation insulating film in a PTI region.
摘要:
A memory cell information producing unit obtains physical terminal coordinates, physical terminal names and logical terminal names of a memory cell and layout data, and operates based on them to specify parasitic elements parasitic on interconnections of the memory cell, and to produce memory cell information including the physical terminal names and representing physical properties and a connection relationship of inner elements of the memory cell and the parasitic elements. Memory cell array information producing unit obtains connection information determining the connection relationship of physical terminals of the memory cell, assigns node names to the physical terminals of the memory cell based on the connection information, and produces memory cell array information representing the node names of all the memory cells. A memory cell array net list producing unit produces a net list of the memory cell array formed of the memory cell information and the memory cell array information.