Invention Grant
- Patent Title: Radiation tolerant electrical component with non-radiation hardened FET
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Application No.: US10806872Application Date: 2004-03-22
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Publication No.: US06982883B2Publication Date: 2006-01-03
- Inventor: Steven E. Summer
- Applicant: Steven E. Summer
- Agent Stephen E. Feldman, PC
- Main IPC: H02M3/335
- IPC: H02M3/335
Abstract:
A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
Public/Granted literature
- US20050207186A1 Radiation tolerant electrical component with non-radiation hardened fet Public/Granted day:2005-09-22
Information query
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