-
公开(公告)号：US10033347B2
公开(公告)日：2018-07-24
申请号：US15160946
申请日：2016-05-20
Applicant: Steven E. Summer
Inventor： Steven E. Summer
Abstract: A DC/DC electrical configuration for operating over a large span of input voltages. The electrical configuration converter including a pre-filter, a voltage limiter; a first DC/DC converter; a second DC/DC converter; a step-down transformer; and a rectifier filter. The DC-DC electrical configuration safely operates in a presence of an input voltage that varies in magnitude.
-
公开(公告)号：US06982883B2
公开(公告)日：2006-01-03
申请号：US10806872
申请日：2004-03-22
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: H02M3/335
Abstract: A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
-
3.发明申请WIDE INPUT VOLTAGE RANGE DC-DC CONVERTER WITH INPUT SURGE PROTECTION 审中-公开具有输入浪涌保护功能的宽输入电压范围直流 - 直流转换器公开(公告)号：US20160344284A1
公开(公告)日：2016-11-24
申请号：US15160946
申请日：2016-05-20
Applicant: Steven E. Summer
Inventor： Steven E. Summer
CPC classification number: H03H7/0107 , H02M1/32 , H02M1/36 , H02M3/155 , H02M3/335 , H02M2001/0022 , H02M2001/0045 , H02M2001/007
Abstract: A DC/DC electrical configuration for operating over a large span of input voltages. The electrical configuration converter including a pre-filter, a voltage limiter; a first DC/DC converter; a second DC/DC converter; a step-down transformer; and a rectifier filter. The DC-DC electrical configuration safely operates in a presence of an input voltage that varies in magnitude.
Abstract translation: 用于在大跨度输入电压下工作的DC / DC电气配置。 电配置转换器包括预滤波器，电压限制器; 第一DC / DC转换器; 第二个DC / DC转换器; 降压变压器; 和整流滤波器。 DC-DC电气配置在存在大幅度变化的输入电压的情况下安全工作。
-
4.发明授权Radiation tolerant complementary cascode switch using non-radiation hardened transistors 有权使用非辐射硬化晶体管的耐辐射互补共源共栅开关公开(公告)号：US08456198B2
公开(公告)日：2013-06-04
申请号：US12831415
申请日：2010-07-07
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: H03K3/00
CPC classification number: H03K17/691 , H03K17/6871 , H03K2017/0803
Abstract: A power switching circuit designed for operating in a radiation environment using non-radiation hardened components is provided. The power switching circuit provides a high-voltage rated, non-radiation hardened N-channel FET (N-FET) controlled by a relatively small, low-voltage, non-radiation hardened P-channel FET (P-FET), while both devices are operating in a radiation environment. The P-FET device is drive by a sufficiently high drive voltage in order to overcome gate threshold shifts resulting from accumulated radiation damage.
Abstract translation: 提供了一种设计用于在辐射环境中使用非辐射硬化部件进行工作的电源开关电路。 电源开关电路提供由相对较小，低电压，非辐射硬化的P沟道FET（P-FET）控制的高电压额定，非辐射硬化的N沟道FET（N-FET），而两者 设备在辐射环境中运行。 P-FET器件由足够高的驱动电压驱动，以便克服由累积的辐射损伤引起的栅极阈值偏移。
-
5.发明授权公开(公告)号：US07636248B2
公开(公告)日：2009-12-22
申请号：US11288653
申请日：2005-11-29
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: H02M3/335
Abstract: A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
Abstract translation: 提供耐辐射电气元件，而不需要辐射硬化材料FET。 p沟道MOSFET在辐射环境中提供开关能力，因为其栅极电压以负值开始，并且随着辐射而变得更负。 因此，当暴露于辐射时，门仍然是可控的。
-
Patent Agency Ranking
6.发明授权Method for implementing radiation hardened, power efficient, non isolated low output voltage DC/DC converters with non-radiation hardened components 有权实现具有非辐射硬化部件的辐射硬化，功率高效，非隔离的低输出电压DC / DC转换器的方法公开(公告)号：US07635970B2
公开(公告)日：2009-12-22
申请号：US11599146
申请日：2006-11-14
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: G05F1/44
Abstract: A method of producing an economical DC/DC converter that efficiently produces a relatively low output voltage and operates in a high ionizing radiation dose environment such as found in spacecraft and particle accelerator applications. That is, the converter comprises two P-channel FETs, a switching means for switching conductivity between the two P-channel FETs, and output means for outputting an output voltage. The output voltage being a step-down voltage that is unaffected by high-ionizing radiation such that is found in space or particle accelerators.
Abstract translation: 一种生产经济的DC / DC转换器的方法，其有效地产生相对低的输出电压并且在诸如在航天器和颗粒加速器应用中发现的高电离辐射剂量环境中操作。 也就是说，转换器包括两个P沟道FET，用于在两个P沟道FET之间切换电导率的开关装置和用于输出输出电压的输出装置。 输出电压是不受高电离辐射影响的降压电压，从而在空间或粒子加速器中发现。
-
公开(公告)号：US20170331277A1
公开(公告)日：2017-11-16
申请号：US15595190
申请日：2017-05-15
Applicant: Steven E. Summer
Inventor： Steven E. Summer
CPC classification number: H02H5/005 , H02H5/04 , H02M3/28 , H02M3/335 , H02M2001/0045
Abstract: A radiation-hardened DC-DC converter capable of operating at cryogenic temperatures in high radiation environments. The radiation-hardened DC-DC converter can include an input side, the input side producing a high frequency AC voltage; a transformer; and an output side, the output side including a magnetic amplifier, wherein the pre-regulated high frequency AC voltage is fed to the magnetic amplifier through the transformer allowing the magnetic amplifier to provide a pulse width modulation function for voltage regulation.
-
8.发明授权公开(公告)号：US08125797B2
公开(公告)日：2012-02-28
申请号：US11333457
申请日：2006-01-17
Applicant: Steven E. Summer
Inventor： Steven E. Summer
CPC classification number: H02M3/28 , H02M3/33523
Abstract: A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
Abstract translation: 提供耐辐射电气元件，而不需要辐射硬化材料FET。 p沟道MOSFET在辐射环境中提供开关能力，因为其栅极电压以负值开始，并且随着辐射而变得更负。 因此，当暴露于辐射时，门仍然是可控的。
-
9.发明申请Radiation Tolerant Complementary Cascode Switch Using Non-Radiation Hardened Transistors 有权使用非辐射硬化晶体管的辐射耐受互补串联开关公开(公告)号：US20120007656A1
公开(公告)日：2012-01-12
申请号：US12831415
申请日：2010-07-07
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: H03K17/687 , H02H9/04
CPC classification number: H03K17/691 , H03K17/6871 , H03K2017/0803
Abstract: A power switching circuit designed for operating in a radiation environment using non-radiation hardened components is provided. The power switching circuit provides a high-voltage rated, non-radiation hardened N-channel FET (N-FET) controlled by a relatively small, low-voltage, non-radiation hardened P-channel FET (P-FET), while both devices are operating in a radiation environment. The P-FET device is drive by a sufficiently high drive voltage in order to overcome gate threshold shifts resulting from accumulated radiation damage.
Abstract translation: 提供了一种设计用于在辐射环境中使用非辐射硬化部件进行工作的电源开关电路。 电源开关电路提供由相对较小，低电压，非辐射硬化的P沟道FET（P-FET）控制的高电压额定，非辐射硬化的N沟道FET（N-FET），而两者 设备在辐射环境中运行。 P-FET器件由足够高的驱动电压驱动，以便克服由累积的辐射损伤引起的栅极阈值偏移。
-
公开(公告)号：US07495498B2
公开(公告)日：2009-02-24
申请号：US11328827
申请日：2006-01-10
Applicant: Steven E. Summer
Inventor： Steven E. Summer
IPC: H03K17/687
CPC classification number: H03K17/691
Abstract: The present invention provides a radiation-tolerant, solid-state-relay without radiation-hardened parts. In further detail, the solid-state-relay includes a non-hardened P-channel MOSFET, a low power storage of voltage gain and a feedback signal with the low power stage of voltage gain being relatively insensitive to radiation effects.
Abstract translation: 本发明提供了不具有辐射硬化部件的辐射耐受的固态继电器。 更详细地，固态继电器包括非硬化P沟道MOSFET，电压增益的低功率存储和具有低功率级的电压增益的反馈信号对辐射效应相对不敏感。
-
-
-
-
-
-
-
-
-
Search Results
27
records
(took 0.015 seconds)
