发明授权
- 专利标题： Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
- 专利标题（中）： 用于保护半导体器件中的铁电电容器的氢屏障及其制造方法
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申请号： US10620516申请日： 2003-07-16
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公开(公告)号： US06984857B2公开(公告)日： 2006-01-10
- 发明人: K. R. Udayakumar , Martin G. Albrecht , Theodore S. Moise, IV , Scott R. Summerfelt , Sanjeev Aggarwal , Jeff L. Large
- 申请人： K. R. Udayakumar , Martin G. Albrecht , Theodore S. Moise, IV , Scott R. Summerfelt , Sanjeev Aggarwal , Jeff L. Large
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.
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