发明授权
US06985222B2 Chamber leakage detection by measurement of reflectivity of oxidized thin film
失效
通过测量氧化薄膜的反射率进行室内泄漏检测
- 专利标题： Chamber leakage detection by measurement of reflectivity of oxidized thin film
- 专利标题（中）： 通过测量氧化薄膜的反射率进行室内泄漏检测
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申请号： US10423379申请日： 2003-04-25
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公开(公告)号： US06985222B2公开(公告)日： 2006-01-10
- 发明人: Hsi-Kuei Cheng , Chu-Chang Chen , Ting-Chun Wang , Szu-An Wu , Ying-Lang Wang , Hsien-Ping Feng
- 申请人： Hsi-Kuei Cheng , Chu-Chang Chen , Ting-Chun Wang , Szu-An Wu , Ying-Lang Wang , Hsien-Ping Feng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G01N21/88
- IPC分类号： G01N21/88
摘要：
A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.