发明授权
- 专利标题: Method for forming crystalline semiconductor film and apparatus for forming the same
-
申请号: US10209243申请日: 2002-08-01
-
公开(公告)号: US06987036B2公开(公告)日: 2006-01-17
- 发明人: Toshiji Hamatani , Misako Nakazawa , Naoki Makita
- 申请人: Toshiji Hamatani , Misako Nakazawa , Naoki Makita
- 申请人地址: JP Kanagawa-ken JP Osaka
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki-ku Kaisha
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki-ku Kaisha
- 当前专利权人地址: JP Kanagawa-ken JP Osaka
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2001-233820 20010801
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.
公开/授权文献
信息查询
IPC分类: