Method of manufacturing a crystalline semiconductor film
    2.
    发明授权
    Method of manufacturing a crystalline semiconductor film 失效
    晶体半导体膜的制造方法

    公开(公告)号:US06734050B2

    公开(公告)日:2004-05-11

    申请号:US10229385

    申请日:2002-08-28

    IPC分类号: H01L2184

    摘要: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

    摘要翻译: 催化剂元素的自旋加成方法是简单且非常重要的技术,因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量,但是存在以下问题: 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动,并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低,则显而易见的是, 衬底内添加的催化剂元素得到改善。 因此,通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

    公开(公告)号:US20060024925A1

    公开(公告)日:2006-02-02

    申请号:US11240467

    申请日:2005-10-03

    IPC分类号: H01L21/20 H01L21/36

    摘要: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
    4.
    发明授权
    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
    结晶半导体膜及其制造方法以及半导体装置

    公开(公告)号:US07960296B2

    公开(公告)日:2011-06-14

    申请号:US12269274

    申请日:2008-11-12

    IPC分类号: H01L21/00

    摘要: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

    摘要翻译: 催化剂元素的自旋加成方法是简单且非常重要的技术,因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量,但是存在以下问题: 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动,并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低,则显而易见的是, 衬底内添加的催化剂元素得到改善。 因此,通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
    5.
    发明授权
    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
    结晶半导体膜及其制造方法以及半导体装置

    公开(公告)号:US07452791B2

    公开(公告)日:2008-11-18

    申请号:US11240467

    申请日:2005-10-03

    IPC分类号: H01L21/20

    摘要: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

    摘要翻译: 催化剂元素的自旋加成方法是简单且非常重要的技术,因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量,但是存在以下问题: 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动,并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低,则显而易见的是, 衬底内添加的催化剂元素得到改善。 因此,通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
    7.
    发明授权
    Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
    结晶半导体膜及其制造方法以及半导体装置

    公开(公告)号:US06951802B2

    公开(公告)日:2005-10-04

    申请号:US10822820

    申请日:2004-04-13

    摘要: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

    摘要翻译: 催化剂元素的自旋加成方法是简单且非常重要的技术,因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量,但是存在以下问题: 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动,并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低,则显而易见的是, 衬底内添加的催化剂元素得到改善。 因此,通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

    Semiconductor device and method of manufacturing the same
    10.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20050170573A1

    公开(公告)日:2005-08-04

    申请号:US11088888

    申请日:2005-03-25

    摘要: Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

    摘要翻译: 解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。 在n沟道TFT中,其源极/漏极区仅包含n型杂质。 因此,与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比,n沟道晶体管的沟道区域的吸杂效率较差。 因此,可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题 的p型杂质的浓度高于n型杂质浓度。