公开(公告)号：US20050151132A1

公开(公告)日：2005-07-14

申请号：US11048893

申请日：2005-02-03

申请人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

发明人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  C30B1/00 ,  H01L21/00 ,  H01L21/36 ,  H01L29/10 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L29/4908 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

公开(公告)号：US06734050B2

公开(公告)日：2004-05-11

申请号：US10229385

申请日：2002-08-28

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L2184

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US20060024925A1

公开(公告)日：2006-02-02

申请号：US11240467

申请日：2005-10-03

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

公开(公告)号：US07960296B2

公开(公告)日：2011-06-14

申请号：US12269274

申请日：2008-11-12

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US07452791B2

公开(公告)日：2008-11-18

申请号：US11240467

申请日：2005-10-03

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US06987036B2

公开(公告)日：2006-01-17

申请号：US10209243

申请日：2002-08-01

申请人： Toshiji Hamatani ,  Misako Nakazawa ,  Naoki Makita

发明人： Toshiji Hamatani ,  Misako Nakazawa ,  Naoki Makita

IPC分类号： H01L21/84

CPC分类号： H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2022

摘要： The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.

公开(公告)号：US06951802B2

公开(公告)日：2005-10-04

申请号：US10822820

申请日：2004-04-13

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L27/08 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US06867077B2

公开(公告)日：2005-03-15

申请号：US10400418

申请日：2003-03-28

申请人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

发明人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/4908 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

摘要翻译： 满足三个要求的“阻挡蚀刻并保护半导体膜免受蚀刻剂作为蚀刻停止剂”的阻挡层，“允许杂质在用于吸气的热处理中自身移动”，形成“具有优异的再现性” 并且用于吸收包含在半导体膜中的杂质。 阻挡层是氧化硅膜，阻挡层中含有的副氧化物的比例为18％以上。

公开(公告)号：US09048203B2

公开(公告)日：2015-06-02

申请号：US13177647

申请日：2011-07-07

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L33/00 ,  H01L27/32 ,  H01L21/67 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

公开(公告)号：US20120168763A1

公开(公告)日：2012-07-05

申请号：US13411842

申请日：2012-03-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L33/08

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。