Method of manufacturing self aligned electrode with field insulation

Invention Grant

US06987065B2 Method of manufacturing self aligned electrode with field insulation 失效

Title translation: 制造具有场绝缘的自对准电极的方法

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Patent Title: Method of manufacturing self aligned electrode with field insulation
Patent Title (中): 制造具有场绝缘的自对准电极的方法
Application No.: US10891038

Application Date: 2004-07-15
Publication No.: US06987065B2

Publication Date: 2006-01-17
Inventor: Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
Applicant: Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
Applicant Address: JP Osaka
Assignee: Matsushita Electric Industrial Co., Ltd.
Current Assignee: Matsushita Electric Industrial Co., Ltd.
Current Assignee Address: JP Osaka
Agency: McDermott Will & Emery LLP
Priority: JP2003-004471 20030110
Main IPC: H01L21/311
IPC: H01L21/311

Method of manufacturing self aligned electrode with field insulation

Abstract:

The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.

Abstract(Chinese):

本发明提供一种半导体器件，包括：半导体层（3）; 经由栅极绝缘膜（10）形成在所述半导体层（3）上的栅电极（11）; 以及形成在所述半导体层（3），所述栅极绝缘膜（10）和所述栅电极（11）的侧壁的一个或多个的第一绝缘膜（13）。其中所述第一绝缘膜（13）覆盖所述栅极绝缘膜（10）表面的一部分。根据半导体装置，可以抑制隔离边缘处的漏电流，从而可以提高可靠性。

Public/Granted literature

US20040259319A1 Semiconductor device and process for manufacturing the same Public/Granted day:2004-12-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀