发明授权
US06987285B2 Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding
有权
可以通过包括不小于3.5微米的InGaAsP有源层和InGaAsP和InP包层的简单结构获得高功率光输出的半导体发光器件
- 专利标题： Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding
- 专利标题（中）： 可以通过包括不小于3.5微米的InGaAsP有源层和InGaAsP和InP包层的简单结构获得高功率光输出的半导体发光器件
-
申请号： US10692125申请日： 2003-10-23
-
公开(公告)号： US06987285B2公开(公告)日： 2006-01-17
- 发明人: Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
- 申请人： Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
- 申请人地址： JP Atsugi
- 专利权人： Anritsu Corporation
- 当前专利权人： Anritsu Corporation
- 当前专利权人地址： JP Atsugi
- 代理机构： Frishauf, Holtz, Goodman & Chick, P.C.
- 优先权： JP2002-319676 20021101
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.