发明授权
US06989550B2 Distributed feedback semiconductor laser equipment employing a grating
有权
采用光栅的分布式反馈半导体激光设备
- 专利标题： Distributed feedback semiconductor laser equipment employing a grating
- 专利标题（中）： 采用光栅的分布式反馈半导体激光设备
-
申请号： US10606834申请日： 2003-06-27
-
公开(公告)号： US06989550B2公开(公告)日： 2006-01-24
- 发明人: Kouji Nakahara , Tomonobu Tsuchiya , Akira Taike , Kazunori Shinoda
- 申请人： Kouji Nakahara , Tomonobu Tsuchiya , Akira Taike , Kazunori Shinoda
- 申请人地址： JP Tokyo JP Kanagawa
- 专利权人： Hitachi, Ltd.,Opnext Japan, Inc.
- 当前专利权人： Hitachi, Ltd.,Opnext Japan, Inc.
- 当前专利权人地址： JP Tokyo JP Kanagawa
- 代理机构： Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权： JP2002-341668 20021126
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107.
公开/授权文献
- US20040099859A1 Optical semiconductor equipment 公开/授权日：2004-05-27
信息查询
IPC分类:
