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公开(公告)号：US08124432B2
公开(公告)日：2012-02-28
申请号：US12630008
申请日：2009-12-03
IPC分类号： H01L21/205 , H01L31/18 , H01S5/22 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/2009 , H01S5/3213 , H01S5/3215 , H01S5/3407
摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
摘要翻译： 在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。 在制造具有包括InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN基氮化物半导体光学器件中，生长InGaN势垒层的步骤包括：第一步骤，在1 ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。
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公开(公告)号：US20110096383A1
公开(公告)日：2011-04-28
申请号：US12999392
申请日：2009-06-11
IPC分类号： G02B26/10
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译： 本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。 以下光束扫描图像投影装置是实现该目的的一种手段。 在包括发射分别不同波长的光束的多个光源的光束扫描图像投影装置中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置 每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与 中心参考点 以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴 每个光束。
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公开(公告)号：US07223993B2
公开(公告)日：2007-05-29
申请号：US11210760
申请日：2005-08-25
申请人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
发明人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
IPC分类号： H01L29/06
CPC分类号： H01S5/34313 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , H01S5/0265 , H01S5/0287 , H01S5/12 , H01S5/1221 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/34306 , H01S5/34366 , Y10S438/962
摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently.This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
摘要翻译： 在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。 本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成 在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。
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公开(公告)号：US06989550B2
公开(公告)日：2006-01-24
申请号：US10606834
申请日：2003-06-27
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/1231 , H01S5/2009 , H01S5/3409 , H01S5/34313
摘要： The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107.
摘要翻译： 具有InGaAlAs有源层的现有技术的分布式反馈激光器涉及由于器件电阻高而使其激光特性在高温下劣化的问题。 根据本发明，通过在n型InP衬底101上形成InGaAlAs-MQW层104来制造脊型激光器; 在InGaAlAs-MQW层104上依次生长p型InGaAlAs-GRIN-SCH层105，p型InAlAs电子阻挡层106和p型光栅层107; 形成光栅; 并依次重新生长p型InP包覆层108和p型InGaAs接触层。 光栅的凹深小于p型光栅层107的厚度。
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公开(公告)号：US06958831B1
公开(公告)日：2005-10-25
申请号：US09399284
申请日：1999-09-17
申请人： Kouji Nakahara
发明人： Kouji Nakahara
CPC分类号： H04N1/0402
摘要： At a conventional image scanning method, it takes long time to transfer an image data of whole image, consequently it takes long time to display the whole image on a display. Therefore, an image scanning method and an apparatus thereof, with which a user can recognize mistakes at reading a document at earlier time, are provided. By one time scanning, an image data whose resolution is lower than fundamental resolution is read. The image data of lower resolution is obtained by that the image data are thinned out. And this image data having lower resolution is displayed on a display as a preview image. By rescanning, an image whose resolution is higher than the preview image is read and displayed. This preview image can be displayed in short time, therefore the user can recognize a mistake at earlier time.
摘要翻译： 在传统的图像扫描方法中，传输整个图像的图像数据需要很长时间，因此在显示器上显示整个图像需要很长时间。 因此，提供了一种图像扫描方法及其装置，用户可以在早期读取文档时识别错误。 一次扫描，读取分辨率低于基本分辨率的图像数据。 通过减少图像数据，获得较低分辨率的图像数据。 并且具有较低分辨率的该图像数据作为预览图像显示在显示器上。 通过重新扫描，读取并显示分辨率高于预览图像的图像。 该预览图像可以在短时间内显示，因此用户可以在较早时间识别出错误。
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公开(公告)号：US20050207463A1
公开(公告)日：2005-09-22
申请号：US11130150
申请日：2005-05-17
申请人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
发明人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
CPC分类号： H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/3201
摘要： The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.
摘要翻译： 本发明提供了一种高度可靠的脊 - 波导半导体激光二极管和光学模块。 脊波导激光二极管的p侧电极具有形成在第一导体层区域上的第一导体层区域和第二导体层区域。 第二导体层区域的至少一个面从反射面向内凹入。 因此，脊 - 波导半导体激光二极管具有这样的结构，其中由施加在二极管面上的电极应力引起的应变减小，并且不发生饱和吸收。 由此获得的脊 - 波导半导体激光二极管是可靠的，并且使用它的光学模块的可靠性非常高。
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公开(公告)号：US06931039B2
公开(公告)日：2005-08-16
申请号：US10412425
申请日：2003-04-14
申请人： Kouji Nakahara , Ryoji Takeyari
发明人： Kouji Nakahara , Ryoji Takeyari
CPC分类号： H01S5/041 , H01S5/026 , H01S5/042 , H01S5/0427 , H01S5/2224 , H01S5/2275
摘要： Optical transmitter equipment and a semiconductor laser device are provided. In one example, optical transmitter equipment includes a semiconductor laser driven by a direct-modulated method. The optical transmitter equipment comprises at least a semiconductor laser, the semiconductor laser having an active layer for laser oscillation and a clad region for optical confinement; an emission device capable of supplying optical energy to the active layer in the semiconductor laser; and a drive circuit for the semiconductor laser. The emission device is configured to supply optical energy corresponding to a bias current in the semiconductor laser to the active layer in the semiconductor laser.
摘要翻译： 提供光发射机设备和半导体激光器件。 在一个示例中，光发射机设备包括由直接调制方法驱动的半导体激光器。 所述光发射机设备至少包括半导体激光器，所述半导体激光器具有用于激光振荡的有源层和用于光学限制的包层区域; 能够向半导体激光器中的有源层提供光能的发射器件; 以及用于半导体激光器的驱动电路。 发射装置被配置为将与半导体激光器中的偏置电流相对应的光能量提供给半导体激光器中的有源层。
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公开(公告)号：US07583714B2
公开(公告)日：2009-09-01
申请号：US11679349
申请日：2007-02-27
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译： 其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。 本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。
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公开(公告)号：US06943922B2
公开(公告)日：2005-09-13
申请号：US09840910
申请日：2001-04-25
CPC分类号： H04N1/1911
摘要： An image reading apparatus is provided which is capable of reading an original document at a higher speed. M pieces of lines on the surface of the original document can be simultaneously read by M pieces of line-like strings of light sensing devices making up a CCD (Charge-Coupled Device) having an interval represented by N pieces of lines to be read. When simultaneous reading is completed, the original document is moved to a line existing apart by L pieces of lines from the lines that have been read. While the original document is moving, image signals of lines that have been read are A/D (analog to digital) converted and then stored to memory regions. Simultaneous reading operation and subsequent storing are sequentially performed on lines on which the line-like strings of light sensing devices are placed.
摘要翻译： 提供了能够以更高速度读取原稿的图像读取装置。 可以通过M条由具有由N条待读取的间隔表示的间隔的由CCD（电荷耦合器件）构成的光感测装置的M条线同时读取原稿的表面上的M条线。 当同时读取完成时，将原始文档移动到与已读取的行分开的L条线上存在的线上。 在原始文档移动的同时，已经读取的行的图像信号被A / D（模数转换）转换并存储到存储器区域。 在其上放置有线状的感光元件串的线上依次执行同时读取操作和随后的存储。
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公开(公告)号：US06563608B1
公开(公告)日：2003-05-13
申请号：US09323038
申请日：1999-06-01
IPC分类号： H04N104
CPC分类号： H04N1/0282 , H04N1/02815 , H04N1/02845 , H04N1/0285
摘要： A document reading apparatus includes a light-source assembly which can provide the reduced number of parts and the effective use of light. The light-source assembly includes a plate and a holder. The plate has a reflective surface at one side thereof and a fixing surface at the other side thereof, wherein the plate is fixed at the fixing surface such that the reflective surface is placed in a predetermined direction. The holder is provided on the reflective surface of the one side of the plate. The holder holds and fixes the light source substantially parallel to the reflective surface.
摘要翻译： 文件读取装置包括能够提供减少数量的部件和有效使用光的光源组件。 光源组件包括板和支架。 该板在其一侧具有反射表面，在其另一侧具有固定表面，其中该板被固定在固定表面上使得反射表面被放置在预定的方向上。 保持器设置在板的一侧的反射表面上。 保持器保持并固定基本平行于反射表面的光源。
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