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公开(公告)号：US20120228626A1
公开(公告)日：2012-09-13
申请号：US13366313
申请日：2012-02-04
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/872 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/66143
摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.
摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。
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公开(公告)号：US20100189154A1
公开(公告)日：2010-07-29
申请号：US12628834
申请日：2009-12-01
IPC分类号： H01L29/20 , H01S5/125 , H01L31/107 , H01L31/105
CPC分类号： H01L31/105 , G02B6/12007 , G02B6/12009 , G02B6/29344 , G02B6/29352 , G02B2006/12097 , G02B2006/121 , G02B2006/12159 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02581 , H01L31/03042 , H01L31/107 , H01S5/0208 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/125 , H01S5/227
摘要： A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.
摘要翻译： 目的是提供一种半绝缘InP衬底上具有良好特性的半导体光学器件。 首先，使用在导电性基板上具有Ru-InP层的半绝缘基板。 其次，使用在Ru-InP衬底或Fe-InP衬底上包含Ru-InP层的半绝缘衬底，并且使用n型半导体层，量子阱层和p型半导体的半导体层 层以此顺序堆叠。
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公开(公告)号：US07583714B2
公开(公告)日：2009-09-01
申请号：US11679349
申请日：2007-02-27
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译： 其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。 本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。
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公开(公告)号：US07514349B2
公开(公告)日：2009-04-07
申请号：US11505293
申请日：2006-08-17
申请人： Takashi Shiota , Tomonobu Tsuchiya
发明人： Takashi Shiota , Tomonobu Tsuchiya
IPC分类号： H01L21/28
CPC分类号： H01S5/305 , B82Y20/00 , H01L33/305 , H01S5/0265 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3211 , H01S5/3215 , H01S5/34313
摘要： The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.
摘要翻译： 本发明的目的是为了减少作为p型掺杂剂的C被掺杂时的活性层附近的结晶劣化，并抑制作为p型掺杂剂的Zn的扩散为 未掺杂的有源层，从而实现清晰的掺杂分布。 当在C掺杂的InGaAlAs上侧引导层和未掺杂的有源层之间提供具有良好结晶度的Zn掺杂的InGaAlAs层时，可以降低结晶度降低的C掺杂InGaAlAs层的影响 活动层 此外，可以通过C掺杂的InGaAlAs层来抑制来自Zn掺杂的InP包层的Zn扩散。
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公开(公告)号：US20080247433A1
公开(公告)日：2008-10-09
申请号：US11841010
申请日：2007-08-20
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2201 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.
摘要翻译： 具有低电阻和高可靠性的氮化物半导体激光器。 通过选择性生长形成掩埋层，并且p型包覆层的形状被倒梯形，使得p型覆层和p型接触层的电阻降低。 为了激光器的长期可靠性，埋层是一种高电阻半绝缘层，可以抑制漏电流的增加。
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公开(公告)号：US5666455A
公开(公告)日：1997-09-09
申请号：US713867
申请日：1996-09-13
申请人： Masahiro Aoki , Tatemi Ido , Takayuki Tsutsui , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai , Atsushi Nakamura
发明人： Masahiro Aoki , Tatemi Ido , Takayuki Tsutsui , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai , Atsushi Nakamura
CPC分类号： H01S5/22 , G02B6/10 , G02B2006/12097 , G02B2006/12107 , G02B2006/12121 , G02B2006/12142 , G02B2006/12176 , H01S5/12 , H01S5/209 , H01S5/4025
摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.
摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。
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公开(公告)号：US08598594B2
公开(公告)日：2013-12-03
申请号：US13366313
申请日：2012-02-04
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/872 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/66143
摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.
摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。
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8.发明申请公开(公告)号：US20100150194A1
公开(公告)日：2010-06-17
申请号：US12630008
申请日：2009-12-03
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/2009 , H01S5/3213 , H01S5/3215 , H01S5/3407
摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
摘要翻译： 在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。 在制造具有包含InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN系氮化物半导体光学元件的情况下，生长InGaN势垒层的工序包括：第1工序， ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。
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9.发明申请公开(公告)号：US20090016397A1
公开(公告)日：2009-01-15
申请号：US12216817
申请日：2008-07-11
申请人： Akihisa Terano , Tomonobu Tsuchiya
发明人： Akihisa Terano , Tomonobu Tsuchiya
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/32 , H01L33/40 , H01S5/0213 , H01S5/22 , H01S5/3063 , H01S5/3216
摘要： A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlxGa1-XN (0
摘要翻译： 将提供一种在低电压下操作并具有优异的可靠性和性能的氮化物半导体发光器件。 它具有第一p型覆盖层和第二p型覆盖层的至少两层的多层p型覆盖层，其中第二p型覆盖层含有较高的p型杂质 浓度第一p型覆盖层的厚度范围为2至20nm，并且由Al含量与掺杂p的第一p型覆盖层的X
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公开(公告)号：US07329894B2
公开(公告)日：2008-02-12
申请号：US11202285
申请日：2005-08-12
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。
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