发明授权
- 专利标题： Method for forming a memory structure using a modified surface topography and structure thereof
- 专利标题（中）： 使用改性表面形貌及其结构形成记忆结构的方法
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申请号： US10765804申请日： 2004-01-27
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公开(公告)号： US06991984B2公开(公告)日： 2006-01-31
- 发明人: Paul A. Ingersoll , Gowrishankar L. Chindalore , Ramachandran Muralidhar
- 申请人： Paul A. Ingersoll , Gowrishankar L. Chindalore , Ramachandran Muralidhar
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Kim-Marie Vo; Joanna G. Chiu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
To increase the gate coupling ratio of a semiconductor device 10, discrete elements 22, such as nanocrystals, are deposited over a floating gate 16. In one embodiment, the discrete elements 22 are pre-formed in a vapor phase and are attached to the semiconductor device 10 by electrostatic force. In one embodiment, the discrete elements 22 are pre-formed in a different chamber than that where they are attached. In another embodiment, the same chamber is used for the entire deposition process. An optional, interfacial layer 17 may be formed between the floating gate 16 and the discrete elements 22.