发明授权
- 专利标题: Semiconductor device and a method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10828262申请日: 2004-04-21
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公开(公告)号: US06992386B2公开(公告)日: 2006-01-31
- 发明人: Toshiyuki Hata , Hiroshi Sato
- 申请人: Toshiyuki Hata , Hiroshi Sato
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2003-204732 20030731
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.
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