专利检索 ap:("Toshiyuki Hata" OR "Hiroshi Sato") AND inv:"Hiroshi Sato" 第 1 页

1.

发明授权
Semiconductor device 失效
标题翻译：半导体器件

公开(公告)号：US08183607B2

公开(公告)日：2012-05-22

申请号：US13189883

申请日：2011-07-25

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET disposed on the obverse surface, a third electrode of the MOSFET disposed on a second, opposing surface of the chip, first, second, and third conductive members, each having top surface and opposing bottom surface, the first, second, and third conductive members connecting with the first, second, and third electrodes electrically, respectively, a sealing body having top and bottom surfaces and sealing parts of the first, second, and third conductive members, the first conductive member having first, second, and third contiguous portions, the first portion is positioned over the first electrode, the second is positioned between the first and second portions and the third portion is positioned under the obverse surface of the chip.

摘要翻译： 半导体器件具有包括MOSFET的半导体芯片，设置在芯片的正面上的MOSFET的第一电极，设置在正面的MOSFET的第二控制电极，设置在第二个MOSFET上的MOSFET的第三电极分别具有顶表面和相对的底表面的芯片，第一，第二和第三导电构件的相对表面，第一，第二和第三导电构件分别与第一，第二和第三电极电连接，密封本体具有第一，第二和第三导电构件的顶表面和底表面和密封部分，第一导电构件具有第一，第二和第三邻接部分，第一部分位于第一电极上方，第二部分位于第第一和第二部分，并且第三部分位于芯片的正面下方。

2.

发明申请
SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件

公开(公告)号：US20120034742A1

公开(公告)日：2012-02-09

申请号：US13276995

申请日：2011-10-19

申请人： Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda

发明人： Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda

IPC分类号： H01L21/50

CPC分类号： H01L23/49582 , H01L23/49503 , H01L23/49524 , H01L23/49548 , H01L23/49562 , H01L23/544 , H01L24/05 , H01L24/29 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/77 , H01L24/78 , H01L24/83 , H01L24/84 , H01L24/85 , H01L29/0615 , H01L29/41766 , H01L29/456 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L2223/54406 , H01L2223/54433 , H01L2223/54486 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05624 , H01L2224/0603 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/37124 , H01L2224/40091 , H01L2224/40245 , H01L2224/40247 , H01L2224/4103 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4846 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/4912 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/78 , H01L2224/83801 , H01L2224/8385 , H01L2224/84205 , H01L2224/85205 , H01L2224/85207 , H01L2224/85214 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01054 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/83205 , H01L2924/206

摘要： To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

摘要翻译： 实现密封在其中的功率MOSFET的小型表面安装封装的导通电阻的降低。硅芯片安装在与构成漏极引线的引线集成的管芯焊盘部分上。硅芯片在其主表面上具有源极焊盘和栅极焊盘。硅芯片的背面配置功率MOSFET的漏极，并通过Ag浆料粘合到芯片焊盘部分的上表面。构成源极引线的引线通过Al带电耦合到源极焊盘，而构成栅极引线的引线通过Au线电耦合到栅极焊盘。

3.

发明申请
Semiconductor device 审中-公开

公开(公告)号：US20070040250A1

公开(公告)日：2007-02-22

申请号：US11589895

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

4.

发明申请
Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US20060097391A1

公开(公告)日：2006-05-11

申请号：US11312528

申请日：2005-12-21

申请人： Toshiyuki Hata , Hiroshi Sato

发明人： Toshiyuki Hata , Hiroshi Sato

IPC分类号： H01L23/48

CPC分类号： H01L24/83 , H01L23/49562 , H01L24/11 , H01L24/13 , H01L24/33 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16245 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/83139 , H01L2224/8314 , H01L2224/83192 , H01L2224/838 , H01L2224/84138 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/0105 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012

摘要： A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

摘要翻译： 公开了一种难以引起半导体芯片破损的薄型半导体器件。半导体器件包括密封构件，位于密封构件内的半导体芯片，半导体芯片在其第一主表面上具有源电极和栅电极，并且在作为其后表面的第二主表面上具有漏电极，具有上表面和下表面的第一电极板（漏电极板），第一电极板的上表面的一部分暴露于密封构件的上表面，第一电极的端部的下表面部分以及第二电极板（源极电极板和栅极电极板），其具有暴露于密封构件的下表面的下表面和位于密封构件内的上表面，其中，半导体芯片的漏电极通过粘合剂，一个或多个螺柱型凸块电连接到漏电极板电极由半导体芯片的源电极和栅电极的表面上的金线形成，凸块电极被导电粘合剂覆盖，凸起电极和源极和栅电极板通过粘合剂彼此电连接，并且凸起电极和源极和栅电极板彼此不接触。

5.

发明申请
SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件

公开(公告)号：US20110298020A1

公开(公告)日：2011-12-08

申请号：US13189883

申请日：2011-07-25

申请人： Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/772

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极金属。

6.

发明授权
MOSFET package 有权
标题翻译： MOSFET封装

公开(公告)号：US07985991B2

公开(公告)日：2011-07-26

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

摘要翻译： 半导体器件具有半导体衬底，其具有MOSFET，用于设置在衬底的第一主表面上的MOSFET的主电流的电极，用于控制设置在第一主表面上的MOSFET的电极，MOSFET的后平面电极设置在所述基板的第二相对表面上，以及电连接到所述后平面电极的外部连接端子，所述外部电极包含第一部分，第二部分和第三部分，所述第一部分位于所述后平面电极，第三部分位于第二主表面下方，第三部分经由第二部分连接到第一部分。

7.

发明授权
Semiconductor packaging device comprising a semiconductor chip including a MOSFET 有权
标题翻译：包括包括MOSFET的半导体芯片的半导体封装装置

公开(公告)号：US07408251B2

公开(公告)日：2008-08-05

申请号：US11312528

申请日：2005-12-21

申请人： Toshiyuki Hata , Hiroshi Sato

发明人： Toshiyuki Hata , Hiroshi Sato

IPC分类号： H01L23/02

CPC分类号： H01L24/83 , H01L23/49562 , H01L24/11 , H01L24/13 , H01L24/33 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16245 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/83139 , H01L2224/8314 , H01L2224/83192 , H01L2224/838 , H01L2224/84138 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/0105 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012

摘要： A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

摘要翻译： 公开了一种难以引起半导体芯片破损的薄型半导体器件。半导体器件包括密封构件，位于密封构件内的半导体芯片，半导体芯片在其第一主表面上具有源电极和栅电极，并且在作为其后表面的第二主表面上具有漏电极，具有上表面和下表面的第一电极板（漏电极板），第一电极板的上表面的一部分暴露于密封构件的上表面，第一电极的端部的下表面部分以及第二电极板（源极电极板和栅极电极板），其具有暴露于密封构件的下表面的下表面和位于密封构件内的上表面，其中，半导体芯片的漏电极通过粘合剂，一个或多个螺柱型凸块电连接到漏电极板电极由半导体芯片的源电极和栅电极的表面上的金线形成，凸块电极被导电粘合剂覆盖，凸起电极和源极和栅电极板通过粘合剂彼此电连接，并且凸起电极和源极和栅电极板彼此不接触。