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US06995426B2 Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type 有权
具有垂直金属绝缘体半导体晶体管的半导体器件具有不同导电类型的多个空间重叠区域

Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
摘要：
A semiconductor device includes a diffusion area formed in a semiconductor layer of a first conductive type. The diffusion area comprises first and second impurity diffusion areas of the first and second conductive types, respectively. The diffusion area has a first and second areas which are defined by an impurity concentration of the first and second impurity diffusion areas. A junction between the first and second area is formed in a portion in which the first and second impurity diffusion areas overlap each other. A period of the impurity concentration, in a planar direction of the semiconductor layer, of the first or second area is smaller than the maximum width, in the planar direction of the semiconductor layer, of the first and second impurity diffusion areas constituting the first or second area.
摘要（中）：

半导体器件包括形成在第一导电类型的半导体层中的扩散区域。 扩散区域分别包括第一和第二导电类型的第一和第二杂质扩散区域。 扩散区域具有由第一和第二杂质扩散区域的杂质浓度限定的第一和第二区域。 第一和第二区域之间的结点形成在第一和第二杂质扩散区域彼此重叠的部分中。 在第一或第二区域的半导体层的平面方向上的杂质浓度的周期小于半导体层的平面方向上的构成第一或第二区域的第一和第二杂质扩散区域的最大宽度 第二区。

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